HN58V65A Datasheet, PDF (7/28 Pages) Hitachi Semiconductor – 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A)

HN58V65A Series, HN58V66A Series
DC Characteristics (Ta = 0 to + 70°C, V_CC = 2.7 to 5.5 V)
Parameter
Input leakage current
Output leakage current
Standby V_CC curren
Operating V_CC current
Symbol Min
I_LI

I_LO

I_CC1

I_CC2

I_CC3


Typ
Max

2*¹

2
1 to 2 5

1

6

8


12


25
Output low voltage
V_OL


0.4
Output high voltage
V_OH
V_CC × 0.8 

Note: 1. I_LI on RES : 100 µA max (only the HN58V66A series)
Unit
µA
µA
µA
mA
mA
mA
mA
mA
V
V
Test conditions
Vin = 0 V to V_CC
Vout = 0 V to V_CC
CE = V_CC – 0.3 V to V_CC + 1.0 V
CE = V_IH
Iout = 0 mA, Duty = 100%,
Cycle = 1 µs, V_CC = 3.6 V
Iout = 0 mA, Duty = 100%,
Cycle = 1 µs, V_CC = 5.5 V
Iout = 0 mA, Duty = 100%,
Cycle = 100 ns, V_CC = 3.6 V
Iout = 0 mA, Duty = 100%,
Cycle = 70 ns, V_CC = 5.5 V
I_OL = 2.1 mA
I_OH = –400 µA
Capacitance (Ta = +25°C, f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Input capacitance
Cin*¹


6
pF
Vin = 0 V
Output capacitance
Cout*¹


12
pF
Vout = 0 V
Note: 1. This parameter is sampled and not 100% tested.
Rev.3.00, Dec. 04.2003, page 7 of 26