HN58V65A Datasheet, PDF (1/28 Pages) Hitachi Semiconductor – 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A)

HN58V65A Series
HN58V66A Series
64 k EEPROM (8-kword × 8-bit)
Ready/Busy Function, RES Function (HN58V66A)
REJ03C0149-0300Z
(Previous ADE-203-539B (Z) Rev. 2.0)
Rev. 3.00
Dec. 04. 2003
Description
Renesas Technology's HN58V65A series and HN58V66A series are a electrically erasable and
programmable EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power
consumption and high relisbility by employing advanced MNOS memory technology and CMOS process
and circuitry technology. They also have a 64-byte page programming function to make their write
operations faster.
Features
• Single supply: 2.7 to 5.5 V
• Access time:
 100 ns (max) at 2.7 V ≤ V_CC < 4.5 V
 70 ns (max) at 4.5 V ≤ V_CC ≤ 5.5 V
• Power dissipation:
• Active: 20 mW/MHz (typ)
• Standby: 110 µW (max)
• On-chip latches: address, data, CE, OE, WE
• Automatic byte write: 10 ms (max)
• Automatic page write (64 bytes): 10 ms (max)
• Ready/Busy
• Data polling and Toggle bit
• Data protection circuit on power on/off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MNOS cell technology
Rev.3.00, Dec. 04.2003, page 1 of 26