HN58V65A Datasheet, PDF (6/28 Pages) Hitachi Semiconductor – 64 k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A)

HN58V65A Series, HN58V66A Series
Operation Table
Operation
CE
OE
WE
RES*³
Read
Standby
V_IL
V_IL
V_IH
V_H*¹
V_IH
×*²
×
×
Write
V_IL
V_IH
V_IL
V_H
Deselect
V_IL
V_IH
V_IH
V_H
Write Inhibit
×
×
V_IH
×
×
V_IL
×
×
Data Polling
V_IL
V_IL
V_IH
V_H
Program reset
×
×
×
V_IL
Notes: 1. Refer to the recommended DC operating conditions.
2. × : Don’t care
3. This function supported by only the HN58V66A series.
RDY/Busy
High-Z
High-Z
High-Z to V_OL
High-Z


V_OL
High-Z
I/O
Dout
High-Z
Din
High-Z


Dout (I/O7)
High-Z
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Power supply voltage relative to V_SS
Input voltage relative to V_SS
Operating temperature range *²
V_CC
−0.6 to +7.0
V
Vin
−0.5*¹ to +7.0*³
V
Topr
0 to +70
°C
Storage temperature range
Tstg
−55 to +125
°C
Notes: 1. Vin min : −3.0 V for pulse width ≤ 50 ns.
2. Including electrical characteristics and data retention.
3. Should not exceed V_CC + 1 V.
Recommended DC Operating Conditions
Parameter
Symbol
Min
Typ
Supply voltage
Input voltage
Operating temperature
V_CC
V_SS
V_IL
V_IH
V_H*⁴
Topr
2.7

0
0
−0.3*¹

1.9*²

V_CC −0.5 
0

Notes: 1. V_IL min: −1.0 V for pulse width ≤ 50 ns.
2. V_IH = 2.2 V for V_CC = 3.6 to 5.5 V.
3. V_IH max: V_CC + 1.0 V for pulse width ≤ 50 ns.
4. This function is supported by only the HN58V66A series.
5. V_IL = 0.8 V for V_CC = 3.6 V to 5.5 V
Max
Unit
5.5
V
0
V
0.6*⁵
V
V_CC + 0.3*³ V
V_CC + 1.0 V
+70
°C
Rev.3.00, Dec. 04.2003, page 6 of 26