NP82N04PDG_15 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
8
ID = 41 A
7 _Pulsed
6
VGS = 4.5 V
5
4
3
10 V
2
1
0
-100 -50 0
50 100 150 200
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
100
10
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
td(off)
td(on)
tr
tf
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
10
VGS = 10 V
4.5 V
0V
1
0.1
Pulsed
0.01
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
NP82N04PDG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
VGS = 0 V
f = 1 MHz
100
0.1
1
Crss
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
12
VDD = 32 V
10
30
20 V
8V
8
20
10
0
0
6
VGS
4
VDS
2
ID = 82 A
0
20 40 60 80 100 120
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
0.1
di/dt = 100 A/μs
VGS = 0 V
1
10
100
IF - Diode Forward Current - A
Data Sheet D18396EJ1V0DS
5