NP82N04PDG_15 Datasheet, PDF (3/10 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N04PDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
NP82N04PDG-E1-AY
Pure Sn (Tin)
NP82N04PDG-E2-AY
PACKING
Tape
800 p/reel
PACKAGE
TO-263 (MP-25ZP)
typ. 1.5 g
FEATURES
• Super low on-state resistance
RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A)
RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
• Low Ciss Ciss = 6000 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
±82
A
ID(pulse)
±328
A
Total Power Dissipation (TC = 25°C)
PT1
143
W
Total Power Dissipation (TA = 25°C)
PT2
1.8
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
−55 to +175
°C
Repetitive Avalanche Current ^Note2
IAR
43
A
Repetitive Avalanche Energy ^Note2
EAR
185
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V
(TO-263)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.05
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
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Document No. D18396EJ1V0DS00 (1st edition)
Date Published September 2006 NS CP(K)
Printed in Japan
2006