NP82N04PDG_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP82N04PDG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
160
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
RDS(on) Limited
(at VGS = 10 V)
ID(Pulse)
100 μs
100
10
ID(DC)
1 ms
10 ms
DC
1
TC = 25°C
Single pulse
0.1
0.1
Power Dissipation Limited
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3 °C/W
10
1
Rth(ch-C) = 1.05 °C/W
0.1
0.01
1m
10 m
100 m
1
10
PW - Pulse Width - s
Single pulse
100
1000
Data Sheet D18396EJ1V0DS
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