NP82N04PDG_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – SWITCHING N-CHANNEL POWER MOS FET

NP82N04PDG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
300
VGS = 10 V
200
4.5 V
100
Pulsed
0
0
0.5
1
1.5
2
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
2.5
2.0
1.5
1.0
0.5
VDS = VGS
ID = 250 μA
0.0
-100
0
100
200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
7
Pulsed
6
5
VGS = 4.5 V
4
3
10 V
2
1
0
1
10
100
1000
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
100
VDS = 10 V
Pulsed
10
TA = 85°C
125°C
1
150°C
175°C
0.1
0.01
−55°C
−25°C
25°C
0.001
0
1
2
3
4
5
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
10
125°C
150°C
175°C
TA = −55°C
1
−25°C
25°C
85°C
0.1
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
7
6
ID = 82 A
41 A
5
4
3
2
16.4 A
1
Pulsed
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
4
Data Sheet D18396EJ1V0DS