N2500N Datasheet, PDF (7/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
12
ID = 0.25 A
10 ^Pulsed
2.0 V
8
2.5 V
6
VGS = 4.5 V
4
2
0
-75 -25
25
75 125 175
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
100
tf
td(off)
10
tr
td(on)
VDD = 125 V
VGS = 4.5 V
RG = 10 Ω
1
0.1
1
10
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
1
VGS = 4.5 V
0.1
0V
0.01
0.001
0
Pulsed
0.2 0.4 0.6 0.8 1 1.2
VF(S-D) - Source to Drain Voltage - V
N2500N
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
Ciss
100
Coss
10
1
VGS = 0 V
f = 1.0 MHz
0.1
0.1
1
Crss
10
100
1000
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
240
6
VDD = 200 V
200
125 V
5
50 V
160
4
120
3
VGS
80
2
40
0
0
VDS
1
ID = 0.5 A
0
1
2
3
4
5
6
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
VGS = 0 V
di/dt = 100 A/μs
1
0.1
1
10
IF - Diode Forward Current - A
Data Sheet D19677EJ1V1DS
5