N2500N Datasheet, PDF (3/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
N2500N
SWITCHING
N-CHANNEL MOSFET
DESCRIPTION
The N2500N is N-channel MOS Field Effect Transistor designed
for DC-DC converter and 2.5 V drive switching applications.
PACKAGE DRAWING (Unit: mm)
0.4
+0.1
–0.05
0.16
+0.1
–0.06
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 5.8 Ω MAX. (VGS = 4.5 V, ID = 0.25 A)
RDS(on)2 = 6.6 Ω MAX. (VGS = 2.5 V, ID = 0.25 A)
• Low input capacitance
Ciss = 145 pF TYP.
• Small and surface mount package (SC-96)
• Built-in gate protection diode
3
1
2
0.95 0.95
1.9
2.9 ±0.2
ORDERING INFORMATION
PART NUMBER
N2500N-T1B-AT ^Note
N2500N-T2B-AT ^Note
PACKAGE
SC-96 (Mini Mold Thin Type)
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
0 to 0.1
0.65
0.9 to 1.1
1. Gate
2. Source
3. Drain
Marking: YA
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
250
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12
V
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
±0.5
A
ID(pulse)
±2.0
A
Total Power Dissipation (TA = 25°C)
PT1
Total Power Dissipation (TA = 25°C) ^Note2 PT2
0.2
W
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150 °C
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mmt, t ≤ 5 sec
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19677EJ1V1DS00 (1st edition)
Date Published October 2009 NS
Printed in Japan
2009