N2500N Datasheet, PDF (4/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

N2500N
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 250 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±12 V, VDS = 0 V
Gate to Source Cut-off Voltage
VGS(off)
Forward Transfer Admittance ^Note
| yfs |
Drain to Source On-state Resistance ^Note RDS(on)1
VDS = 10 V, ID = 1.0 mA
VDS = 10 V, ID = 0.25 A
VGS = 4.5 V, ID = 0.25 A
RDS(on)2
VGS = 2.5 V, ID = 0.25 A
Input Capacitance
Ciss
VDS = 10 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
Turn-on Delay Time
td(on)
VDD = 125 V, ID = 0.25 A,
Rise Time
tr
VGS = 4.5 V,
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Total Gate Charge
QG
VDD = 200 V,
Gate to Source Charge
QGS
VGS = 4.5 V,
Gate to Drain Charge
Body Diode Forward Voltage ^Note
QGD
VF(S-D)
ID = 0.5 A
IF = 0.5 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 0.5 A, VGS = 0 V,
Qrr
di/dt = 100 A/μs
Note Pulsed
MIN.
0.5
0.8
TYP.
1.0
4.2
4.3
145
17
5
7
12
22
35
4.7
0.4
2.5
0.82
45
36
MAX.
10
±10
1.5
5.8
6.6
1.5
UNIT
μA
μA
V
S
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS ^90%
90%
10% 10%
tr td(off) tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D19677EJ1V1DS