N2500N Datasheet, PDF (6/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

N2500N
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1.6
Pulsed
VGS = 4.5 V
1.2
2.5 V
2.0 V
0.8
0.4
0
0
2
4
6
8
10
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
VDS = 10 V
ID = 1.0 mA
2
1
0
-75
-25
25
75 125 175
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
8
6
VGS = 2.0 V
4
2.5 V
4.5 V
2
0
0.001
Pulsed
0.01
0.1
1
10
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
10
VDS = 10 V
Pulsed
1
0.1
0.01
0.001
Tch = 150°C
125°C
75°C
25°C
−25°C
−55°C
0.0001
0
1
2
3
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
Tch = −55°C
−25°C
25°C
1
0.1
0.01
75°C
125°C
150°C
VDS = 10 V
Pulsed
0.1
1
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
12
10
8
ID = 0.5 A
0.25 A
6
0.05 A
4
2
Pulsed
0
0
2
4
6
8
10
VGS - Gate to Source Voltage - V
4
Data Sheet D19677EJ1V1DS