N2500N Datasheet, PDF (5/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

N2500N
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
10
ID(pulse)
ID(DC)
1
PW
= _{1i00 μs}
0.1
R^D₍^S_V^{(onG)SL=im4i.t5edV)}
1 ms
0.01
0.001
Single Pulse
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mmt
0.1
1
10
10 ms
30 ms
1i 00 mi s
100
1000
VDS - Drain to Source Voltage - V
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
1.4
1.2
1
0.8
0.6
0.4
Mounted on FR-4 board of
0.2 ^{50 mm x 50 mm x 1.6 mmt,}
t ≤ 5 sec
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - °C
1000
100
10
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Without board
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mmt
1
0.1
100 μ
1m
Single Pulse
10 m
100 m
1
10
PW - Pulse Width - s
100
1000
Data Sheet D19677EJ1V1DS
3