HAT3029R Datasheet, PDF (7/10 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET Power Switching

HAT3029R
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
80
60
-6 A
-4.5 V
40
-1, -3 A
20
V_GS = -10 V
I_D = -1, -3, -6 A
0
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
1000
500
Body–Drain Diode Reverse
Recovery Time
200
100
50
20
10
5
di/dt = -100 A/µs
2
V_GS = 0, Ta = 25°C
1
-0.1 -0.3 -1 -3 -10 -30 -100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
0
0
V_DD = -5 V
-10 V
-25 V
-10
-4
V_DD = -5 V
-10 V
-20
-25 V
-8
V_DS
-30
V_{GS -12}
I_D = -6 A
-40
0
8
16 24 32
Gate Charge Qg (nc)
-16
40
Forward Transfer Admittance vs.
Drain Current
100
25°C
30
Tc = –25°C
10
75°C
3
1
0.3
V_DS = -10 V
0.1
Pulse Test
-0.1 -0.3 -1 -3 -10 -30 -100
Drain Current I_D (A)
10000
3000
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
V_GS = 0
f = 1 MHz
300
Coss
100
Crss
30
10
3
1
0
-10
-20
-30
Drain to Source Voltage V_DS (V)
Switching Characteristics
1000
V_GS = -10 V, V_DD = -10 V
PW = 5 µs, Rg = 4.7 Ω
100
td(off)
tr
td(on)
10
tf
1
-0.1 -0.3 -1 -3 -10 -30 -100
Drain Current I_D (A)
REJ03G1597-0600 Rev.6.00 Oct 16, 2007
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