HAT3029R Datasheet, PDF (4/10 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET Power Switching

HAT3029R
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
80
60
I_D = 2 A, 5 A, 10 A
40 ^{4.5 V}
20
V_GS = 10 V
0
-25 0 25 50
2 A, 5 A, 10 A
75 100 125 150
Case Temperature Tc (°C)
Body–Drain Diode Reverse
Recovery Time
100
di/dt = 100 A/µs
V_GS = 0, Ta = 25°C
50
20
10
0.1
1
10
100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
20
I_D = 6 A
40
V_DD = 25 V
10 V
30
V_DS
5V
V_GS ¹⁶
12
20
8
V_DD = 25 V
10
10 V
4
5V
0
0
2
4
6
8
10
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
1000
100
Tc = –25°C
10
25°C
1
75°C
V_DS = 10 V
Pulse Test
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
V_GS = 0
f = 1 MHz
1000
300
100
30
Ciss
Coss
Crss
10
0 5 10 15 20 25 30
Drain to Source Voltage V_DS (V)
Switching Characteristics
1000
V_GS = 10 V, V_DS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
100
td(off)
10
td(on)
tr
1
0.1
1
tf
10
100
Drain Current I_D (A)
REJ03G1597-0600 Rev.6.00 Oct 16, 2007
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