HAT3029R Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET Power Switching

HAT3029R
Reverse Drain Current vs.
Source to Drain Voltage
20
16 _{10 V}
12
8
5V
V_GS = 0 V
4
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1 _0.5
0.2
0.1
0.1 _0.05
0.02
0.01
0.001
0.01
1shot ^pulse
0.0001
10 µ 100 µ 1 m
θch - f(t) = γs (t) x θch - f
θch - f = 143°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Switching Time Test Circuit
Switching Time Waveform
Vin Monitor
Rg
Vout
Monitor
D.U.T.
R_L
Vin
10 V
V_DS
= 10 V
90%
Vin ^10%
Vout 10%
10%
90%
90%
td(on)
tr
td(off)
tf
REJ03G1597-0600 Rev.6.00 Oct 16, 2007
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