HAT3029R Datasheet, PDF (1/10 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET Power Switching

HAT3029R
Silicon N/P Channel Power MOS FET
Power Switching
Features
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8765
1234
2
G
78
DD
4
G
56
DD
REJ03G1597-0600
Rev.6.00
Oct 16, 2007
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
S1
S3
Nch
Pch
Absolute Maximum Ratings
Item
Symbol
Ratings
Nch
Pch
Drain to source voltage
V_DSS
30
–30
Gate to source voltage
V_GSS
±20
-20/+10
Drain current
Drain peak current
I_D
6
I_{D(pulse)Note1}
48
–6
–48
Body-drain diode reverse drain current
Channel dissipation
Channel dissipation
I_DR
Pch ^Note2
Pch ^Note3
6
–6
1.3
2.0
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
REJ03G1597-0600 Rev.6.00 Oct 16, 2007
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