HAT3029R Datasheet, PDF (2/10 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET Power Switching

HAT3029R
Electrical Characteristics
• N Channel
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS
30
Gate to source leak current
I_GSS
—
Zero gate voltage drain current
I_DSS
—
Gate to source cutoff voltage
V_GS(off)
1.0
Static drain to source on state
R_DS(on)
—
resistance
R_DS(on)
—
Forward transfer admittance
|y_fs|
6
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage
V_DF
—
Body–drain diode reverse recovery
t_rr
—
time
Notes: 4. Pulse test
Typ
—
—
—
—
27
40
10
410
110
41
3.1
1.1
1.1
5.4
10
36
3.0
0.84
20
Max
—
±0.1
1
2.5
34
58
—
—
—
—
—
—
—
—
—
—
—
1.10
—
(Ta = 25°C)
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I_D = 10 mA, V_GS = 0
V_GS = ±20 V, V_DS = 0
V_DS = 30 V, V_GS = 0
V_DS = 10 V, I_D = 1 mA
I_D = 3 A, V_GS = 10 V ^Note4
I_D = 3 A, V_GS = 4.5 V ^Note4
I_D = 3 A, V_DS = 10 V ^Note4
V_DS = 10 V
V_GS = 0
f = 1 MHz
V_DD = 10 V
V_GS = 4.5 V
I_D = 6 A
V_GS = 10 V, I_D = 3 A
V_DD ≅ 10 V
R_L = 3.33 Ω
Rg = 4.7 Ω
IF = 6 A, V_GS = 0 ^Note4
IF = 6 A, V_GS = 0
di_F/ dt = 100 A/ µs
• P Channel
Item
Drain to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Symbol
V_(BR)DSS
I_GSS
I_DSS
V_GS(off)
R_DS(on)
R_DS(on)
|y_fs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t_d(on)
t_r
t_d(off)
t_f
V_DF
t_rr
Min
–30
—
—
–1.0
—
—
6
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
25
36
10
1330
215
155
11.5
3.2
4.4
18
19
47
8
–0.84
20
Max
—
±0.1
–1
–2.5
32
53
—
—
—
—
—
—
—
—
—
—
—
–1.10
—
Unit
V
Test Conditions
I_D = –10 mA, V_GS = 0
µA V_GS = -20,+10 V, V_DS = 0
µA
V_DS = –30 V, V_GS = 0
V
V_DS = –10 V, I_D = –1 mA
mΩ
I_D = –3 A, V_GS = –10 V ^Note4
mΩ
I_D = –3 A, V_GS = – 4.5 V ^Note4
S
I_D = –3 A, V_DS = –10 V ^Note4
pF V_DS = –10 V
pF
V_GS = 0
pF ^{f = 1MHz}
nC V_DD = –10 V
nC ^VGS ^{= –4.5 V}
nC ^{ID = -6 A}
ns
V_GS = –10 V, I_D = –3 A
ns
V_DD ≅ –10 V
ns
R_L = 3.33 Ω
ns
R_g = 4.7 Ω
V
IF = –6 A, V_GS = 0 ^Note4
ns IF = –6 A, V_GS = 0
di_F/ dt =100A/µs
REJ03G1597-0600 Rev.6.00 Oct 16, 2007
Page 2 of 9