HAT3004R Datasheet, PDF (7/11 Pages) Renesas Technology Corp – Silicon N Channel / P Channel Power MOS FET High Speed Power Switching

HAT3004R
Forward Transfer Admittance vs.
Drain Current
10
Tc = –25°C
5
75°C
2
25°C
1
0.5
0.2
0.1
–0.2 –0.5 –1 –2
V_DS = –10 V
Pulse Test
–5 –10 –20
Drain Current I_D (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
30
Crss
V_GS = 0
f = 1 MHz
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS = –4 V, V_DD = –10 V
PW = 3 µs, duty ≤ 1 %
200
100
tr
50
tf
20
td(on)
10
td(off)
5
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain Current I_D (A)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
–0.1 –0.2
di / dt = 20 A / µs
V_GS = 0, Ta = 25°C
–0.5 –1 –2 –5 –10
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
0
0
V_DD = –5 V
–10 V
–10
–25 V
–4
–20
V_GS
–8
V_DS
–30
–12
V_DD = –25 V
–10 V
–40
–5 V
–16
I_D = –3.5 A
–50
0
4
8
12 16
Gate Charge Qg (nc)
–20
20
Reverse Drain Current vs.
Source to Drain Voltage
–20
Pulse Test
–16
–12
V_GS = –5 V
–8
0, 5 V
–4
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
Rev.11.00 Sep 07, 2005 page 7 of 10