HAT3004R Datasheet, PDF (2/11 Pages) Renesas Technology Corp – Silicon N Channel / P Channel Power MOS FET High Speed Power Switching

HAT3004R
Absolute Maximum Ratings
Item
Symbol
Value
Nch
Pch
Drain to source voltage
Gate to source voltage
VDSS
VGSS
30
–30
±20
±20
Drain current
Drain peak current
ID
ID (pulse) ^{Note 1}
5.5
–3.5
44
–28
Body-drain diode reverse drain current
Channel dissipation
Channel dissipation
IDR
Pch ^{Note 2}
Pch ^{Note 3}
5.5
–3.5
2
3
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
N Channel
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note: 4. Pulse test
Symbol
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VDF
trr
(Ta = 25°C)
Min Typ Max Unit
Test Conditions
30
—
—
V ID = 10 mA, VGS = 0
±20
—
—
V IG = ±100 µA, VDS = 0
—
—
±10
µA VGS = ±16 V, VDS = 0
—
—
10
µA VDS = 30 V, VGS = 0
1.0
—
2.0
V VDS = 10 V, ID = 1 mA
—
0.050 0.065
Ω
ID = 3 A, VGS = 10 V ^{Note 4}
— 0.078 0.11
Ω
ID = 3 A, VGS = 4 V ^{Note 4}
3.5
5.5
—
S
ID = 3 A, VDS = 10 V ^{Note 4}
— 310 —
pF VDS = 10 V
— 220 —
pF VGS = 0
— 100 —
pF ^{f = 1 MHz}
—
17
—
— 190 —
ns VGS = 4 V, ID = 3 A
ns VDD ≅ 10 V
—
25
—
ns
—
60
—
ns
—
0.9 1.4
V
IF = 5.5 A, VGS = 0 ^{Note 4}
—
50
—
ns IF = 5.5 A, VGS = 0
diF/dt = 20 A/µs
Rev.11.00 Sep 07, 2005 page 2 of 10