HAT3004R Datasheet, PDF (6/11 Pages) Renesas Technology Corp – Silicon N Channel / P Channel Power MOS FET High Speed Power Switching

HAT3004R
P Channel
Maximum Safe Operation Area
–100
–30
–10
–3
–1
–0.3
–0.1
10 µs
Operation
DC
in
PW
Operation
=
(PW
this area is
limited by R_{DS (on)}
110m0s^µs
10 _ms
≤ ^N₁^o₀^te_s7₎
Ta = 25°C
–0.03 1 shot Pulse
1 Drive Operation
–0.01
–0.1 –0.3 –1 –3
–10 –30
–100
Drain to Source Voltage V_DS (V)
Note 7:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
–20
Tc = –25°C
–16
25°C
–12
75°C
–8
–4
V_DS = –10 V
Pulse Test
0
0
–2 –4 –6 –8 –10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
2
Pulse Test
1
0.5
0.2
V_GS = –4 V
0.1
–10 V
0.05
0.02
–0.2 –0.5 –1 –2
–5 –10 –20
Drain Current I_D (A)
Rev.11.00 Sep 07, 2005 page 6 of 10
Typical Output Characteristics
–20
–10 V
–8 V ^{–6 V}
–16
Pulse Test
–5 V
–12
–4.5 V
–8
–4 V
–3.5 V
–4
–3 V
V_GS = –2.5 V
0
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
Pulse Test
–0.4
–0.3
I_D = –2 A
–0.2
–1 A
–0.1
–0.5 A
0
0
–2 –4 –6 –8 –10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
I_D = –2 A
0.3
V_GS = –4 V
0.2
–1 A, –0.5 A
0.1
–2 A, –1 A, –0.5 A
–10 V
0
–40 0
40 80 120 160
Case Temperature Tc (°C)