HAT3004R Datasheet, PDF (4/11 Pages) Renesas Technology Corp – Silicon N Channel / P Channel Power MOS FET High Speed Power Switching

HAT3004R
Main Characteristics
N Channel
Maximum Safe Operation Area
100
10 µs
30
10
3
1
0.3
OtlihmpisietearadretDiboaCynisORinp_D^e_S^ra₍^t_o^iPo_n^nW₎ ^(P=W101_≤^mm11_N^s00s_o^0s_te)^µ₆^s
0.1
Ta = 25°C
0.03 1 shot Pulse
1 Drive Operation
0.01
0.1 0.3 1 3
10 30 100
Drain to Source Voltage V_DS (V)
Note 6:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
20
–25°C
Tc = 75°C
16
25°C
12
8
4
V_DS = 10 V
Pulse Test
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
0.05
V_GS = 4 V
10 V
0.02
0.01
0.2
0.5 1 2
5 10 20
Drain Current I_D (A)
Rev.11.00 Sep 07, 2005 page 4 of 10
Typical Output Characteristics
10 V 8 V
20
6V
5V
Pulse Test
16
4.5 V
12
4V
8
3.5 V
4
3V
V_GS = 2.5 V
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
I_D = 5 A
0.2
2A
0.1
1A
0
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
0.12
0.08
V_GS = 4 V
2A _1A
I_D = 5 A
0.04
10 V
1 A, 2 A, 5 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)