HAT3004R Datasheet, PDF (5/11 Pages) Renesas Technology Corp – Silicon N Channel / P Channel Power MOS FET High Speed Power Switching

HAT3004R
Forward Transfer Admittance vs.
Drain Current
20
10
Tc = –25°C
5
2
75°C
25°C
1
0.5
0.2
0.1
0.2
V_DS = 10 V
Pulse Test
0.5 1 2
5 10 20
Drain Current I_D (A)
1000
500
200
100
50
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
20
V_GS = 0
f = 1 MHz
10
0
10
20
30
40
50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS = 4 V, V_DD = 10 V
PW = 3 µs, duty ≤ 1 %
200
tr
100
tf
50
td(off)
20
10
td(on)
5
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
0.1 0.2
di / dt = 20 A / µs
V_GS = 0, Ta = 25°C
0.5 1 2
5 10
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
20
I_D = 5.5 A
40
16
30
V_DS
20
V_DD = 5 V
10 V
20 V
12
V_GS 8
10
V_DD = 20 V
4
10 V
5V
0
0
0
2
4
6
8 10
Gate Charge Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
20
16
V_GS = 5 V
12
8
0, –5 V
4
Pulse Test
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Rev.11.00 Sep 07, 2005 page 5 of 10