HAT2285WP Datasheet, PDF (7/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

HAT2285WP
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
40
30
1 A, 2 A, 5 A
20 _{VGS = 4.5 V}
10
10 V
1 A, 2 A, 5 A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
10
5
2
1
0.1 0.3
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50 _{ID = 22 A}
10
V_GS
40
V_DD = 25 V
10 V
8
5V
30 _VDS
6
20
4
10
V_DD = 25 V
2
10 V
5V
0
0
10
20 30 40
50
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current
100
50
Tc = –25°C
20
10
5
25°C
2
1
75°C
0.5
0.2
0.1
0.1 0.2 0.5 1 2
V_DS = 10 V
Pulse Test
5 10 20 50 100
Drain Current I_D (A)
Typical Capacitance vs.
Drain to Source Voltage
10000
5000 ^VGS ^{= 0}
f = 1 MHz
2000
Ciss
1000
500
200
100
50
Coss
Crss
20
10
0 5 10 15 20 25 30
Drain to Source Voltage V_DS (V)
Switching Characteristics
100
50
td(off)
20
tr
10
td(on)
5
tf
2 V_GS = 10 V, V_DD = 10 V
Rg =4.7 Ω, duty ≤ 1 %
1
0.1 0.2 0.5 1 2 5 10 20
50 100
Drain Current I_D (A)
Rev.3.00 Apr 05, 2006 page 7 of 9