HAT2285WP Datasheet, PDF (1/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

HAT2285WP
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
REJ03G1371-0300
Rev.3.00
Apr 05, 2006
Features
• Low on-resistance
• Capable of 4.5 V gate drive
• High density mounting
• Built-in Schottky Barrier Diode
Outline
RENESAS Package code: PWSN0008DB-A
(Package name: WPAK-D)
5 ⁶⁷⁸
2
G1
4 32 1
78
D1 D1
56
S1/D2 S1/D2
4
G2
S1/D2(kelvin)
1
MOS1
S2
3
MOS2 and
Schottky Barrier Diode
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
V_DSS
Gate to source voltage
V_GSS
Drain current
Drain peak current
I_D
I_{D(pulse)Note1}
Reverse drain current
Channel dissipation
I_DR
Pch ^Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Tc = 25°C
MOS1
30
±20
14
56
14
8
150
–55 to +150
Ratings
MOS2 & SBD
30
±12
22
88
22
15
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.3.00 Apr 05, 2006 page 1 of 9