HAT2285WP Datasheet, PDF (3/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

HAT2285WP
Electrical Characteristics
• MOS1
Power vs. Temperature Derating
16
12
8
4
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
20
4.5 V
10 V
3.6 V
10
3.2 V
V_GS = 2.8 V
Pulse Test
0
5
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs
Gate to Source Voltage
200
Pulse Test
150
100
I_D = 5 A
50
2A
1A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Rev.3.00 Apr 05, 2006 page 3 of 9
Maximum Safe Operation Area
1000
100
10
1
DCPOWpe=1ra1mt0isomn1s00
10
µ_s
µ_s
Operation in
this area is
0.1 limited by R_DS(on)
Tc = 25°C
0.01 ^{1 shot Pulse}
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
10
Tc = 75°C
25°C
−25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
V_GS = 4.5 V
10 V
10
1
0.1
1
Pulse Test
10
100
Drain Current I_D (A)