HAT2285WP Datasheet, PDF (6/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

HAT2285WP
• MOS2 & Schottky Barrier Diode
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
20
5V
Pulse Test
10 V
2.8 V
2.6 V
10
2.4 V
V_GS = 2.3 V
0
5
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs
Gate to Source Voltage
160
Pulse Test
120
80
I_D = 5 A
40
2A
1A
0
2 4 6 8 10 12
Gate to Source Voltage V_GS (V)
Maximum Safe Operation Area
1000
100
10
DCPOWp=er1a10timomnss100
10
µ_s
µ_s
1 _{Operation in}
this area is
limited by R_DS(on)
0.1
Tc = 25°C
0.01 ^{1 shot Pulse}
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
10
Tc = 75°C
25°C
−25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
V_GS = 4.5 V
10
10 V
1
0.1
1
10
100
Drain Current I_D (A)
Rev.3.00 Apr 05, 2006 page 6 of 9