HAT2285WP Datasheet, PDF (4/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

HAT2285WP
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
40
5A
I_D = 1 A, 2 A
30 ^{VGS = 4.5 V}
20
10 V
10
1 A, 2 A, 5 A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
10
5
2
1
0.1 0.3 1
di / dt = 100 A / µs
V_GS = 0, Ta = 25°C
3 10 30 100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
I_D = 14 A
40
V_DD = 25 V
10 V
5V
30
V_DS
20
16
V_GS
12
20
8
10
V_DD = 25 V
4
10 V
5V
0
0
4
8
12 16 20
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current
100
50
Tc = –25°C
20
10
5
25°C
2
1
75°C
0.5
0.2
0.1
0.1 0.2 0.5 1 2
V_DS = 10 V
Pulse Test
5 10 20 50 100
Drain Current I_D (A)
Typical Capacitance vs.
Drain to Source Voltage
10000
5000
V_GS = 0
f = 1 MHz
2000
1000
Ciss
500
200
Coss
100
Crss
50
20
10
0 5 10 15 20 25 30
Drain to Source Voltage V_DS (V)
Switching Characteristics
100
50
td(off)
tr
20
10
td(on)
5
tf
2 V_GS = 10 V, V_DD = 10 V
Rg =4.7 Ω, duty ≤ 1 %
1
0.1 0.2 0.5 1 2 5 10 20
50 100
Drain Current I_D (A)
Rev.3.00 Apr 05, 2006 page 4 of 9