HAT2195R-EL-E Datasheet, PDF (7/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOSFET Power Switching

HAT2195R
10
Normalized Transient Thermal Impedance vs. Pulse Width
D=1
1 _0.5
0.2
0.1 ^0.1
0.05
0.02
0.01
0.01
0.001
1shot ^pulse
0.0001
10 µ 100 µ 1 m
θch - f(t) = γs (t) x θch - f
θch - f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Vin
15 V
Avalanche Test Circuit
V_DS
Monitor
Rg
50 Ω
L
I AP
Monitor
D. U. T
Avalanche Waveform
E_AR =
1
2
L • I_AP² •
V_DSS
V_{DSS –} V_DD
V_DD
I_AP
I_D
V_(BR)DSS
V_DS
V_DD
0
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
10 V
V_DS
= 10 V
Switching Time Waveform
Vin ^10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
t_f
Rev.3.00, Apr.01.2004, page 5 of 6