HAT2195R-EL-E Datasheet, PDF (4/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOSFET Power Switching

HAT2195R
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V_(BR)DSS
I_GSS
I_DSS
V_GS(off)
R_DS(on)
R_DS(on)
|y_fs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t_d(on)
t_r
t_d(off)
t_f
V_DF
t_rr
Min
30
—
—
1.0
—
—
25
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
Max
Unit
—
—
V
—
± 0.1 µA
—
1
µA
—
2.5
V
4.6
5.8
mΩ
5.8
8.4
mΩ
42
—
S
3400 —
pF
785
—
pF
250
—
pF
1.0
—
Ω
23
—
nC
10
—
nC
5.5
—
nC
12
—
ns
16
—
ns
50
—
ns
6.5
—
ns
0.80 1.04 V
32
—
ns
(Ta = 25°C)
Test Conditions
I_D = 10 mA, V_GS = 0
V_GS = ±20 V, V_DS = 0
V_DS = 30 V, V_GS = 0
V_DS = 10 V, I _D = 1 mA
I_D = 9 A, V_GS = 10 V ^Note4
I_D = 9 A, V_GS = 4.5 V ^Note4
I_D = 9 A, V_DS = 10 V ^Note4
V_DS = 10 V
V_GS = 0
f = 1 MHz
V_DD = 10 V
V_GS = 4.5 V
I_D = 18 A
V_GS = 10 V, I_D = 9 A
V_DD ≅ 10 V
R_L = 1.11 Ω
Rg = 4.7 Ω
IF = 18 A, V_GS = 0 ^Note4
IF = 18 A, V_GS = 0
diF/ dt = 100 A/ µs
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
0
50
100
150
200
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
500
10 µs
100
10
1
PW ₌
DC _Operation
Operation in
this area is
limited by R_DS(on)
1 _ms
10 _ms
(PW _<
100 _µs
1^N₀^ot_s^e_{) 5}
0.1
Ta = 25 °C
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V_DS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Rev.3.00, Apr.01.2004, page 2 of 6