HAT2195R-EL-E Datasheet, PDF (6/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOSFET Power Switching

HAT2195R
100
Body Drain Diode Reverse
Recovery Time
50
20
di/dt = 100 A/µs
V_GS = 0, Ta = 25°C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
20
I_D = 18 A
40
V_GS
16
30 _VDS
20
12
V_DD = 25 V
10 V
5V ⁸
10
V_DD = 25 V
4
10 V
5V
0
0
20 40 60 80 100
Gate Charge Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage
50
40
10 V
30
5V
V_GS = –5.0 V
20
10
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
10000
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
30 _{VGS = 0}
f = 1 MHz
10
0 5 10 15 20 25 30
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
300
100
tr
td(off)
30
td(on)
10
tf
3
1
0.1 0.3
V_GS = 10 V, V_DS = 10 V
Rg = 4.7 Ω, duty < 1 %
1 3 10 30 100
Drain Current I_D (A)
Maximum Avalanche Energy vs.
Channel Temperature Derating
50
IAP = 18 A
40
VDD = 15 V
duty < 0.1 %
Rg > 50 Ω
30
20
10
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Rev.3.00, Apr.01.2004, page 4 of 6