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HAT2195R-EL-E Datasheet, PDF (3/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOSFET Power Switching | |||
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HAT2195R
Silicon N Channel Power MOS FET
Power Switching
Features
⢠High speed switching
⢠Capable of 4.5 V gate drive
⢠Low drive current
⢠High density mounting
⢠Low on-resistance
RDS(on) = 4.6 m⦠typ. (at VGS = 10 V)
Outline
REJ03G0060-0300Z
Rev.3.00
Apr.01.2004
SOP-8
8 7 65
4
G
1 234
56 7 8
DD D D
SSS
12 3
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal impedance
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-a Note3
30
±20
18
144
18
18
32.4
2.5
50
Channel temperature
Tch
150
Storage temperature
Tstg
â55 to +150
Notes: 1. PW ⤠10 µs, duty cycle ⤠1%
2. Value at Tch = 25°C, Rg ⥠50 â¦
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ⤠10s
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
(Ta = 25°C)
Rev.3.00, Apr.01.2004, page 1 of 6
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