HAT2195R-EL-E Datasheet, PDF (5/9 Pages) Renesas Technology Corp – Silicon N Channel Power MOSFET Power Switching

HAT2195R
Typical Output Characteristics
50
10 V
2.8 V
40
4V
30
2.6 V
20
V_GS = 2.4 V
10
Pulse Test
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Pulse Test
160
120
I_D = 20 A
80
10 A
40
5A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Temperature
12
Pulse Test
10
20 A
5 A, 10 A
8
V_GS = 4.5 V
6
4
10 V
I_D = 5 A, 10 A, 20 A
2
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Typical Transfer Characteristics
50
V _DS = 10 V
Pulse Test
40
30
20
Tc = 75°C
10
25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
10
V_GS = 4.5 V
5
10 V
2
1
1 3 10 30 100 300 1000
Drain Current I_D (A)
1000
300
100
Forward Transfer Admittance vs.
Drain Current
Tc = –25 °C
30
10
3
1
0.3
0.1
0.1
75 °C
25 °C
V_DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I_D (A)
Rev.3.00, Apr.01.2004, page 3 of 6