HAT1041T Datasheet, PDF (7/8 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

Package Dimensions
3.00
3.30 Max
85
1
*0.22
+0.08
–0.07
0.20 ± 0.06
4
0.65
0.13 M
0.805 Max
0.10
HAT1041T
As of January, 2001
Unit: mm
1.0
6.40 ± 0.20
0° – 8° _{0.50 ± 0.10}
*Dimension including the plating thickness
Base material dimension
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TTP-8D
—
—
—