HAT1041T Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1041T
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 2.5 V gate drive
• Low drive current
• High density mounting
Outline
ADE-208-1238F (Z)
7th. Edition
Jan. 2001
TSSOP-8
158
DDD
87 ^{6 5}
123 ⁴
4
G
SSSS
2 36 7
1, 5, 8 Drain
2, 3, 6, 7 Source
4
Gate