HAT1041T Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1041T
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
V_DSS
-20
Gate to source voltage
V_GSS
±12
Drain current
I_D
-6.0
Drain peak current
I Note1
D(pulse)
-48
Body-drain diode reverse drain current I_DR
-6.0
Channel dissipation
Pch ^Note2
1.3
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤10s
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V_(BR)DSS
-20
Gate to source leak current
I _GSS
—
Zero gate voltege drain current I_DSS
—
Gate to source cutoff voltage V_GS(off)
-0.4
Static drain to source on state R_DS(on)
—
resistance
R_DS(on)
—
Forward transfer admittance |y_fs|
6.5
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance Crss
—
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body–drain diode forward
V_DF
—
voltage
Body–drain diode reverse
t _rr
—
recovery time
Note: 3. Pulse test
Typ
Max
Unit
—
—
V
—
±0.1 µA
—
1
µA
—
-1.4
V
0.020 0.026 Ω
0.035 0.045 Ω
11
—
S
1850 —
pF
590
—
pF
380
—
pF
30
—
ns
145
—
ns
210
—
ns
170
—
ns
-0.85 -1.10 V
70
—
ns
Test Conditions
I_D = -10mA, V_GS = 0
V_GS = ±12V, V_DS = 0
V_DS = -20 V, V_GS = 0
V_DS = -10V, I _D = -1mA
I_D =- 3A, V_GS =- 4.5V ^Note3
I_D = -3A, V_GS = -2.5V ^Note3
I_D = -3A, V_DS = -10V ^Note3
V_DS = -10V
V_GS = 0
f = 1MHz
V_GS =- 4V, I_D = -3A
V_DD ≅ -10V
IF =-6.0A, V_GS = 0 ^Note3
IF = -6.0A, V_GS = 0
diF/ dt =20A/µs