HAT1041T Datasheet, PDF (6/8 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1041T
10
Normalized Transient Thermal Impedance vs. Pulse Width
D=1
1
0.5
0.1 ^0.2
0.1
0.05
0.02
0.01 _0.01
0.001
1shot ^pulse
0.0001
10 µ 100 µ 1 m
θ _{ch - f(t) =} γ_{s (t)} • θ _{ch - f}
θ _{ch - f = 139 °C/W, Ta = 25 °C}
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (s)
100 1000 10000