HAT1041T Datasheet, PDF (5/8 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

Main Characteristics
Typical Output Characteristics
-20
-2V
Pulse Test
-16
-10 V
-4 V
-12
-3 V
-8
V_GS = -1.5 V
-4
0
-2
-4
-6
-8 -10
Drain to Source Voltage V _DS (V)
HAT1041T
Typical Transfer Characteristics
-20
V _DS = -10 V
-16
Pulse Test
-12
-8
Tc = -25°C
-4
25°C
75°C
0
-1
-2
-3
-4
-5
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
Pulse Test
0.1
0.05
-2.5 V
0.02
0.01
0.005
V_GS = -4.5 V
0.002
-0.2
-0.5 -1 -2
-5 -10 -20
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.1
Pulse Test
0.08
0.06
0.04 ^{-2.5 V}
I D = -5 A
-2 A, -1 A
0.02
0
-40
V_GS = -4.5 V
-5 A
-2 A, -1 A
0
40 80 120 160
Case Temperature Tc (°C)