BB506M Datasheet, PDF (7/9 Pages) Renesas Technology Corp – Built in Biasing Circuit MOS FET IC UHF RF Amplifier

BB506M
S parameter
Freq
(MHz)
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
S11
Mag
0.995
0.991
0.992
0.987
0.984
0.981
0.975
0.967
0.964
0.958
0.951
0.939
0.933
0.922
0.916
0.900
0.892
0.883
0.866
0.858
Deg
-3.3
-6.2
-9.3
-12.4
-15.5
-18.6
-21.7
-24.8
-27.9
-30.8
-33.9
-37.0
-40.3
-43.5
-46.5
-49.6
-52.8
-56.2
-59.2
-62.0
(V_DS = 5 V, V_G1 = 5 V, V_G2S = 4 V, R_G = 100 kΩ, Zo = 50 Ω)
S21
S12
S22
Mag
Deg
Mag
Deg
Mag
Deg
3.28
177.9
0.001
17.6
0.991
-1.8
3.26
175.5
0.001
75.6
0.996
-3.6
3.28
173.7
0.002
73.8
0.995
-5.2
3.26
171.3
0.002
79.5
0.997
-7.0
3.27
170.0
0.004
116.5
0.995
-8.6
3.24
167.3
0.003
89.6
0.993
-10.3
3.23
165.8
0.004
76.3
0.992
-11.8
3.24
163.3
0.004
87.0
0.989
-13.9
3.22
161.9
0.004
91.9
0.991
-15.5
3.22
159.4
0.006
89.0
0.987
-17.0
3.22
157.9
0.006
100.4
0.988
-18.9
3.20
155.4
0.004
84.2
0.985
-20.4
3.20
154.1
0.004
85.4
0.984
-22.2
3.20
150.7
0.007
80.4
0.983
-23.7
3.19
150.7
0.007
93.5
0.981
-25.5
3.19
146.7
0.006
108.8
0.979
-27.2
3.18
146.4
0.005
122.9
0.978
-28.9
3.18
142.8
0.005
120.3
0.975
-30.6
3.17
142.3
0.006
104.0
0.970
-32.3
3.16
139.8
0.006
121.3
0.970
-33.8
REJ03G1604-0100 Rev.1.00 Nov 26, 2007
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