BB506M Datasheet, PDF (3/9 Pages) Renesas Technology Corp – Built in Biasing Circuit MOS FET IC UHF RF Amplifier

BB506M
900 MHz Power Gain, Noise Figure Test Circuit
V_G1 V_G2
C4
C5
V_D
C6
Input (50 Ω)
R1
R2
C3
G2
G1
L1 L2
R3
RFC
D
L3 L4
S
Output (50 Ω)
C1
C2
C1, C2 :
C3 :
C4 to C6 :
R1 :
R2 :
R3 :
Variable Capacitor (10 pF MAX)
Disk Capacitor (1000 pF)
Air Capacitor (1000 pF)
100 kΩ
47 kΩ
4.7 kΩ
L1:
10
21
L3:
29
L2:
26
L4:
18
(φ1 mm Copper wire)
Unit : mm
RFC : f1 mm Copper wire with enamel 4 turns inside dia 6 mm
REJ03G1604-0100 Rev.1.00 Nov 26, 2007
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