BB506M Datasheet, PDF (4/9 Pages) Renesas Technology Corp – Built in Biasing Circuit MOS FET IC UHF RF Amplifier

BB506M
Main Characteristics
Maximum Channel Power Dissipation Curve
400
300
200
100
0
50
100
150
200
Ambient Temperature Ta (°C)
* Value on the glass epoxy board (50 mm × 40 mm × 1 mm)
Drain Current vs. Gate1 Voltage
25
V_DS = 5 V
V_G2S = 4 V
20 ^RG ^{= 100 kΩ}
4V
15
3V
10
2V
5
V_G2S = 1 V
0
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Drain Current vs. Gate Resistance
25
20
15
10
5
V_DS = V_G1 = 5 V
V_G2S = 4 V
0
10
100
1000
Gate Resistance R_G (kΩ)
REJ03G1604-0100 Rev.1.00 Nov 26, 2007
Page 4 of 8
Typical Output Characteristics
25
V_G2S = 4 V
V_DS = V_G1
20
15
10
68 kΩ
82 kΩ
100 kΩ
120 kΩ
150 kΩ
5
= ^{180 kΩ}
RG
0
0
1
2
3
4
5
Drain to Source Voltage V_DS (V)
Forward Transfer Admittance
vs. Gate1 Voltage
50
V_DS = 5 V
V_G2S =4 V
40 R_G = 100 kΩ
f = 1 kHz
4V
30
3V
20
10 _{VG2S = 0}
2V
1V
0
0
1
2
3
4
5
Gate1 Voltage V_G1 (V)
Input Capacitance vs.
5
Gate2 to Source Voltage
V_DS = 5 V
V_G1 = 5 V
4
R_G = 100 kΩ
f = 1 MHz
3
2
1
0
0
1
2
3
4
Gate2 to Source Voltage V_G2S (V)