BB506M Datasheet, PDF (1/9 Pages) Renesas Technology Corp – Built in Biasing Circuit MOS FET IC UHF RF Amplifier

BB506M
Built in Biasing Circuit MOS FET IC
UHF RF Amplifier
Features
• Built in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain
PG = 24 dB typ. (f = 900 MHz)
• Low noise
NF = 1.4 dB typ. (f = 900 MHz)
• Low output capacitance
Coss = 1.1 pF typ. (f = 1 MHz)
• Provide mini mold packages: CMPAK-4 (SOT-343mod)
Outline
Notes:
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
2
3
1
4
1. Marking is “FS-“.
2. BB506M is individual type number of RENESAS BBFET.
REJ03G1604-0100
Rev.1.00
Nov 26, 2007
1. Source
2. Gate1
3. Gate2
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate1 to source voltage
Symbol
V_DS
V_G1S
Gate2 to source voltage
V_G2S
Drain current
Channel power dissipation
I_D
Pch^Note3
Channel temperature
Tch
Storage temperature
Tstg
Notes: 3. Value on the glass epoxy board (50 mm × 40 mm × 1 mm).
Ratings
6
+6
–0
+6
–0
30
300
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
REJ03G1604-0100 Rev.1.00 Nov 26, 2007
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