BB506M Datasheet, PDF (2/9 Pages) Renesas Technology Corp – Built in Biasing Circuit MOS FET IC UHF RF Amplifier

BB506M
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown V(BR)DSS
6
voltage
Gate1 to source breakdown V(BR)G1SS
+6
voltage
Gate2 to source breakdown V(BR)G2SS
+6
voltage
Gate1 to source cutoff
current
I_G1SS
—
Gate2 to source cutoff
current
I_G2SS
—
Gate1 to source cutoff
voltage
V_G1S(off)
0.5
Gate2 to source cutoff
voltage
V_G2S(off)
0.4
Drain current
I_D(op)
12
Forward transfer admittance
|y_fs|
27
Input capacitance
Output capacitance
Power gain
Noise figure
C_iss
1.2
C_oss
0.7
PG
19
NF
—
(Ta = 25°C)
Typ
Max
Unit
Test Conditions
—
—
V I_D = 200 µA, V_G1S = V_G2S = 0
—
—
V I_G1 = +10 µA, V_G2S = V_DS = 0
—
—
V I_G2 = +10 µA, V_G1S = V_DS = 0
—
+100
nA V_G1S = +5 V, V_G2S = V_DS = 0
—
+100
nA V_G2S = +5 V, V_G1S = V_DS = 0
0.8
1.1
V V_DS = 5 V, V_G2S = 4 V, I_D = 100 µA
0.7
1.0
V V_DS = 5 V, V_G1S = 5 V, I_D = 100 µA
16
20
mA V_DS = 5 V, V_G1 = 5 V, V_G2S = 4 V
R_G = 100 kΩ
32
38
mS V_DS = 5 V, V_G1 = 5 V, V_G2S = 4 V
R_G = 100 kΩ, f = 1 kHz
1.6
2.0
pF V_DS = 5 V, V_G1 = 5 V, V_G2S = 4 V
1.1
1.5
pF ^RG ^{= 100 kΩ, f = 1 MHz}
24
29
dB V_DS = 5 V, V_G1 = 5V, V_G2S = 4 V
1.4
2.1
dB ^RG ^{= 100 kΩ, f = 900 MHz}
Bias Circuit for Operating Items (I_D(op), |y_fs|, Ciss, Coss, NF, PG)
V_G2
Gate 2
R_G
V_G1
Gate 1
Drain
A
I_D
Source
REJ03G1604-0100 Rev.1.00 Nov 26, 2007
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