BB304C Datasheet, PDF (7/10 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB304C
S11 Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
−10
−.2
−5
−4
−3
−.4
−2
−.6
−.8 _−1
−1.5
Test Condition : _{VDS = 9 V , VG1 = 9 V}
V_G2S = 6 V , R_G = 470 kΩ
50 — 1000 MHz (50 MHz step)
S21 Parameter vs. Frequency
90° ^{Scale: 1 / div.}
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–60°
–90°
Test Condition : _{VDS = 9 V , VG1 = 9 V}
V_G2S = 6 V , R_G = 470 kΩ
50 — 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90° ^{Scale: 0.002 / div.}
120°
60°
150°
30°
180°
0°
−150°
−30°
−120°
−90°
−60°
Test Condition : _{VDS = 9 V , VG1 = 9 V}
V_G2S = 6 V , R_G = 470 kΩ
50 — 1000 MHz (50 MHz step)
S22 Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
−10
−.2
−.4
−.6
−.8 _−1
−5
−4
−3
−2
−1.5
Test Condition : _{VDS = 9 V , VG1 = 9 V}
V_G2S = 6 V , R_G = 470 kΩ
50 — 1000 MHz (50 MHz step)
Rev.6.00 Aug 10, 2005 page 7 of 9