BB304C Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB304C
Absolute Maximum Ratings
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_DS
V_G1S
V_G2S
I_D
Pch
Tch
Tstg
Ratings
12
+10
–0
±10
25
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Drain current
Forward transfer admittance
Power gain
Noise figure
Symbol
V_(BR)DSS
V_(BR)G1SS
V_(BR)G2SS
I_G1SS
I_G2SS
V_G1S(off)
Min
12
+10
±10
—
—
0.4
V_G2S(off)
0.5
Ciss
Coss
Crss
I_D(op) 1
2.3
0.9
0.003
9
I_D(op) 2
—
|y_fs|1
22
|y_fs|2
—
PG1
24
PG2
—
NF1
—
NF2
—
Typ
—
—
—
—
—
—
—
2.8
1.3
0.02
14
13
27
27
29
29
1.2
1.2
Max
—
—
—
+100
±100
1.0
1.0
3.6
2.0
0.05
19
—
34
—
32
—
1.9
—
Unit
V
V
V
nA
nA
V
V
pF
pF
pF
mA
mA
mS
mS
dB
dB
dB
dB
(Ta = 25°C)
Test conditions
I_D = 200 µA, V_G1S = V_G2S = 0
I_G1 = +10 µA, V_G2S = V_DS = 0
I_G2 = +10 µA, V_G1S = V_DS = 0
V_G1S = +9 V, V_G2S = V_DS = 0
V_G2S = +9 V, V_G1S = V_DS = 0
V_DS = 5 V, V_G2S = 4 V
I_D = 100 µA
V_DS = 5 V, V_G1S = 5 V
I_D = 100 µA
V_DS = 5 V, V_G1 = 5 V, V_G2S = 4 V
R_G = 180 kΩ, f = 1 MHz
V_DS = 5 V, V_G1 = 5 V, V_G2S = 4 V
R_G = 180 kΩ
V_DS = 9 V, V_G1 = 9 V, V_G2S =6 V
R_G = 470 kΩ
V_DS = 5 V, V_G1 = 5 V, V_G2S =4 V
R_G = 180 kΩ, f = 1 kHz
V_DS = 9 V, V_G1 = 9 V, V_G2S =6 V
R_G = 470 kΩ, f = 1 kHz
V_DS = 5 V, V_G1 = 5 V, V_G2S =4 V
R_G = 180 kΩ, f = 200 MHz
V_DS = 9 V, V_G1 = 9 V, V_G2S =6 V
R_G = 470 kΩ, f = 200 MHz
V_DS = 5 V, V_G1 = 5 V, V_G2S =4 V
R_G = 180 kΩ, f = 200 MHz
V_DS = 9 V, V_G1 = 9 V, V_G2S =6 V
R_G = 470 kΩ, f = 200 MHz
Rev.6.00 Aug 10, 2005 page 2 of 9