BB304C Datasheet, PDF (5/10 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB304C
Forward Transfer Admittance
vs. Gate1 Voltage
30
V_DS = 9 V
6V
R_G = 390 kΩ
24 _{f = 1 kHz}
5V
4V
3V
2V
18
12
6
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V_G1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V_DS = 9 V
24
R_G = 560 kΩ
f = 1 kHz
6V 5V 4V
18
3V
2V
12
6
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V_G1 (V)
Noise Figure vs. Gate Resistance
4
V_DS = 9 V
V_G1 = 9 V
3
V_G2S = 6 V
f = 200 MHz
2
1
0
0.1 0.2 0.5 1 2
5 10
Gate Resistance R_G (MΩ)
Rev.6.00 Aug 10, 2005 page 5 of 9
Forward Transfer Admittance
vs. Gate1 Voltage
30
V_DS = 9 V
6V
24
R_G = 470 kΩ
f = 1 kHz
5V
4V
3V
2V
18
12
6
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V_G1 (V)
Power Gain vs. Gate Resistance
40
35
30
25
20 _{VDS = 9 V}
V_G1 = 9 V
15 _{VG2S = 6 V}
f = 200 MHz
10
0.1 0.2 0.5 1 2
5 10
Gate Resistance R_G (MΩ)
Power Gain vs. Drain Current
40
35
30
25
20 ^VDS ^{= 9 V}
V_G1 = 9 V
15 ^{VG2S = 6 V}
R_G = variable
f = 200 MHz
10
0
5 10 15 20 25 30
Drain Current I_D (mA)