BB304C Datasheet, PDF (6/10 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB304C
Noise Figure vs. Drain Current
4
V_DS = 9 V
V_G1 = 9 V
3
V_G2S = 6 V
R_G = variable
f = 200 MHz
2
1
0
5 10 15 20 25 30
Drain Current I_D (mA)
Gain Reduction vs.
Gate2 to Source Voltage
60
V_DS = 9 V
50
V_G1 = 9 V
V_G2S = 6 V
40
R_G = 470 kΩ
f = 200 MHz
30
20
10
0 1 2 34 5 6 7
Gate2 to Source Voltage V_G2S (V)
Drain Current vs. Gate Resistance
30
25
20
15
10
5
V_DS = 9 V
V_G1 = 9 V
0 ^{VG2S = 6 V}
0.1 0.2 0.5 1 2
5 10
Gate Resistance R_G (MΩ)
Input Capacitance vs.
Gate2 to Source Voltage
6
5
4
3
2
V_DS = 9 V
1
V_G1 = 9 V
R_G = 470 kΩ
f = 1 MHz
0
1
2
3
4
5
6
Gate2 to Source Voltage V_G2S (V)
Rev.6.00 Aug 10, 2005 page 6 of 9