BB304C Datasheet, PDF (4/10 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB304C
Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (°C)
Drain Current vs.
Gate2 to Source Voltage
25
V_DS = V_G1 = 9 V
20
15
10
5
0
1.2 2.4
270 ^{k Ω}
330 ^{k Ω}
390 ^{k Ω}
470 ^{k Ω}
560 ^{k Ω}
680 ^{k Ω}
820 ^{k Ω}
1M ^Ω
R_G ^{= 1.5 MΩ}
3.8 4.8 6.0
Gate2 to Source Voltage V_G2S (V)
Drain Current vs. Gate1 Voltege
25
V_DS = 9 V
20 ^{RG = 470 kΩ}
15
6V
5V
4V
10
3V
2V
5
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V_G1 (V)
Rev.6.00 Aug 10, 2005 page 4 of 9
Typical Output Characteristics
25
V_G2S = 6 V
20 ^{VG1 = VDS}
15
10
5646₈⁷⁸⁰₂⁰⁰₀^kkk_k^{ΩΩΩ}_Ω
5
1M ^Ω
RG ^{= 1.5 MΩ}
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain Current vs. Gate1 Voltage
25
V_DS = 9 V
R_G = 390 kΩ
20
6V
5V
15
4V
10
3V
2V
5
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V_G1 (V)
Drain Current vs. Gate1 Voltege
25
V_DS = 9 V
20 ^{RG = 560 kΩ}
15
6V
5V
10
4V
3V
2V
5
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V_G1 (V)