2SJ690_15 Datasheet, PDF (7/8 Pages) Renesas Technology Corp – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
200
ID = −1.0 A
Pulsed
150
−2.5 V
100
VGS = −4.5 V
50
0
-50 -25 0 25 50 75 100 125 150
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
100
td(off)
tf
10
td(on)
1
-0.1
tr
VDD = −15.0 V
VGS = −4.5 V
RG = 10 Ω
-1
-10
ID - Drain Current - A
-100
-100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
-10
−4.5 V
-1
VGS = 0 V
-0.1
-0.01
0.0
Pulsed
0.5
1.0
1.5
VF(S-D) - Source to Drain Voltage - V
2SJ690
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
Ciss
100
Coss
Crss
VGS = 0 V
f = 1.0 MHz
10
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-30
-6
VDD = −24.0 V
-25
−15.0 V
-5
−6.0 V
-20
-4
-15
-3
-10
VGS
-2
-5
-0
0
-1
VDS
ID = −2.5 A
-0
2
4
6
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
-0.1
VGS = 0 V
di/dt = −50 A/μ s
-1
-10
IF - Diode Forward Current - A
-100
Data Sheet D19954EJ1V0DS
5