2SJ690_15 Datasheet, PDF (5/8 Pages) Renesas Technology Corp – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

2SJ690
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - °C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
1.5
1.25
1
0.75
0.5
Mounted on FR-4 board of
0.25 _{50 mm x 50 mm x1.6 mm,}
t ≤ 5 sec
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-100
-10
RDS(on) Lim1ited
(VGS = 4.5 V)
ID(DC)
-1
ID(pulse
1_{100 μs}
1_{1 m}
1₁₀
1_{100 m}
m
1
s
s¹
s¹
5s
-0.1
-0.01
Single Pulse
Mounted on FR-4 board of
50 mm x 50 mm x1.6 mm
-0.1
-1
-10
VDS - Drain to Source Voltage - V
-100
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Without board
100
Mounted on FR-4 board of
50 mm x 50 mm x 1.6 mm
10
Single pulse
1
1m
10 m
100 m
1
10
PW - Pulse Width - s
100
1000
Data Sheet D19954EJ1V0DS
3