2SJ690_15 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

2SJ690
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain Cut-off Current
IDSS
VDS = −30 V, VGS = 0 V
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance ^Note
Drain to Source On-state Resistance ^Note
IGSS
VGS(off)
| yfs |
RDS(on)1
VGS = m12 V, VDS = 0 V
VDS = −10 V, ID = −1.0 mA
VDS = −10 V, ID = −1.0 A
VGS = −4.5 V, ID = −1.0 A
RDS(on)2
VGS = −2.5 V, ID = −1.0 A
Input Capacitance
Ciss
VDS = −10 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss
f = 1.0 MHz
Turn-on Delay Time
td(on)
VDD = −15 V, ID = −1.0 A,
Rise Time
tr
VGS = −4.5 V,
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Total Gate Charge
QG
VDD = −24 V,
Gate to Source Charge
QGS
VGS = −4.5 V,
Gate to Drain Charge
Diode Forward Voltage ^Note
QGD
VF(S-D)
ID = −2.5 A
IF = −2.5 A, VGS = 0 V
Reverse Recovery Time
trr
IF = −2.5 A, VGS = 0 V,
Reverse Recovery Charge
Qrr
di/dt = −50 A/μs
Note Pulsed
MIN. TYP. MAX. UNIT
–1 μA
m10 μA
−0.5
−1.5 V
2.0
S
87 119 mΩ
120 217 mΩ
450
pF
80
pF
64
pF
12
ns
5
ns
38
ns
29
ns
5.2
nC
1.1
nC
2.3
nC
0.9
V
37
ns
14
nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG.
VGS (−)
0
τ
τ = 1μs
Duty Cycle ≤ 1%
RL
VDD
VGS(−)
VGS
Wave Form
10%
0
VGS
90%
VDS(−)
90%
VDS
VDS
0
Wave Form
td(on)
10% 10%
tr td(off)
90%
tf
ton
toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = −2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D19954EJ1V0DS